完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Fang-Chung | en_US |
dc.contributor.author | Kung, Li-Jen | en_US |
dc.contributor.author | Chen, Tung-Hsien | en_US |
dc.contributor.author | Lin, Yung-Sheng | en_US |
dc.date.accessioned | 2014-12-08T15:14:42Z | - |
dc.date.available | 2014-12-08T15:14:42Z | - |
dc.date.issued | 2007-02-12 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2535741 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11131 | - |
dc.description.abstract | Copper phthalocyanine (CuPC) has been used as the buffer layer for source and drain electrodes to improve the performance of organic thin-film transistors. The mobility was improved by almost onefold after the modification. By incorporating with CuPC, the contact resistance was reduced, deduced from the line-transfer method. The higher hole current observed in the hole-only diode after adding CuPC further confirms the improvement of hole-injection efficiency. It is concluded that the device improvement is attributed to the reduction of contact resistance, which resulted from the Fermi level pinning at the induced gap states at the Au/CuPC interface. (c) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Copper phthalocyanine buffer layer to enhance the charge injection in organic thin-film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2535741 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 90 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000244249800082 | - |
dc.citation.woscount | 41 | - |
顯示於類別: | 期刊論文 |