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dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorKung, Li-Jenen_US
dc.contributor.authorChen, Tung-Hsienen_US
dc.contributor.authorLin, Yung-Shengen_US
dc.date.accessioned2014-12-08T15:14:42Z-
dc.date.available2014-12-08T15:14:42Z-
dc.date.issued2007-02-12en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2535741en_US
dc.identifier.urihttp://hdl.handle.net/11536/11131-
dc.description.abstractCopper phthalocyanine (CuPC) has been used as the buffer layer for source and drain electrodes to improve the performance of organic thin-film transistors. The mobility was improved by almost onefold after the modification. By incorporating with CuPC, the contact resistance was reduced, deduced from the line-transfer method. The higher hole current observed in the hole-only diode after adding CuPC further confirms the improvement of hole-injection efficiency. It is concluded that the device improvement is attributed to the reduction of contact resistance, which resulted from the Fermi level pinning at the induced gap states at the Au/CuPC interface. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleCopper phthalocyanine buffer layer to enhance the charge injection in organic thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2535741en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000244249800082-
dc.citation.woscount41-
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