Title: Angular and energy dependences of the surface excitation parameter for semiconducting III-V compounds
Authors: Tu, Y. H.
Kwei, C. M.
Tung, C. J.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: electron;dielectric function;inelastic mean free path;surface excitation parameter
Issue Date: 1-Feb-2007
Abstract: Sum-rule-constrained extended Drude dielectric functions were used to study surface excitations generated by energetic electrons moving across surfaces of semiconducting III-V compounds. Parameters in the dielectric functions were determined from fits to experimental optical data and electron energy-loss spectra. Electron inelastic mean free paths (IMFPs) in GaN, GaP, GaAs, GaSb, InAs and InSb were calculated for electron energies between 200 and 2000 eV, and the results were found to follow the simple formula, i.e., gimel = kE(P), where A is the IMFP and E is the electron energy. Surface excitation parameters (SEPs), which describe the total probability of surface excitations by electrons crossing the surface and travelling in vacuum, were also calculated for different electron energies and crossing angles. The SEP was found to follow the simple formula, i.e., P-s = aE-b/cos(c) alpha, where P-s is the SEP and alpha is the crossing anglerelative to the surface normal. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.susc.2006.11.020
http://hdl.handle.net/11536/11152
ISSN: 0039-6028
DOI: 10.1016/j.susc.2006.11.020
Journal: SURFACE SCIENCE
Volume: 601
Issue: 3
Begin Page: 865
End Page: 870
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