標題: 5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer
作者: Meng, Chinchun
Wu, Tzung-Han
Wu, Tse-Hung
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
關鍵字: SiGeBiCMOS;deep trench isolation;Gilbert mixer;CMFB
公開日期: 1-二月-2007
摘要: Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.22152
http://hdl.handle.net/11536/11160
ISSN: 0895-2477
DOI: 10.1002/mop.22152
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 49
Issue: 2
起始頁: 450
結束頁: 451
顯示於類別:期刊論文


文件中的檔案:

  1. 000243297000057.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。