標題: | 5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer |
作者: | Meng, Chinchun Wu, Tzung-Han Wu, Tse-Hung Huang, Guo-Wei 電信工程研究所 Institute of Communications Engineering |
關鍵字: | SiGeBiCMOS;deep trench isolation;Gilbert mixer;CMFB |
公開日期: | 1-二月-2007 |
摘要: | Active PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc. |
URI: | http://dx.doi.org/10.1002/mop.22152 http://hdl.handle.net/11536/11160 |
ISSN: | 0895-2477 |
DOI: | 10.1002/mop.22152 |
期刊: | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
Volume: | 49 |
Issue: | 2 |
起始頁: | 450 |
結束頁: | 451 |
顯示於類別: | 期刊論文 |