完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, K.-H.en_US
dc.contributor.authorChien, C.-C.en_US
dc.contributor.authorHsu, C.-H.en_US
dc.contributor.authorHuang, L.-R.en_US
dc.date.accessioned2014-12-08T15:14:50Z-
dc.date.available2014-12-08T15:14:50Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn1751-858Xen_US
dc.identifier.urihttp://dx.doi.org/10.1049/iet-cds:20050331en_US
dc.identifier.urihttp://hdl.handle.net/11536/11193-
dc.description.abstractAn optimum power metal-oxide-semiconductor field effect transistor (MOSFET) width technique is proposed for enhancing the efficiency characteristics of switching DC-DC converters. By implementing a one-cycle buck DC-DC converter, it is demonstrated that the dynamic power MOSFET width controlling technique has a much improved power reduction whether the load current is light or heavy. The maximum efficiency of the buck converter is similar to 92% with a 3% efficiency improvement for the heavy load condition. The efficiency is further improved by similar to 16% for the light load condition as a result of the power reduction from the large power MOSFET transistors. Also proposed is a new error-correction loop circuit to enable a better load regulation than that of previous designs. Compared with the adaptive gate driver voltage technique, the optimum power MOSFET width can achieve a significant improvement in power saving. It is also superior to the low-voltage-swing MOSFET gate drive technique for switching DC-DC converters.en_US
dc.language.isoen_USen_US
dc.titleOptimum power-saving method for power MOSFET width of DC-DC convertersen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/iet-cds:20050331en_US
dc.identifier.journalIET CIRCUITS DEVICES & SYSTEMSen_US
dc.citation.volume1en_US
dc.citation.issue1en_US
dc.citation.spage57en_US
dc.citation.epage62en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000246106200009-
dc.citation.woscount19-
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