完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Tzung-Hanen_US
dc.contributor.authorMeng, Chinchunen_US
dc.date.accessioned2014-12-08T15:14:50Z-
dc.date.available2014-12-08T15:14:50Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0916-8508en_US
dc.identifier.urihttp://dx.doi.org/10.1093/ietfec/e90-a.2.326en_US
dc.identifier.urihttp://hdl.handle.net/11536/11196-
dc.description.abstractA 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 mu m SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates subharmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-to-RF isolation, IP1dB of -20 dBm, and IIP3 Of -10 dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.en_US
dc.language.isoen_USen_US
dc.subjectSiGeBiCMOSen_US
dc.subjectsub-harmonic mixeren_US
dc.subjectGilbert mixeren_US
dc.subjectself-mixingen_US
dc.subject2LO-to-RF isolationen_US
dc.subjectmixer low frequency noiseen_US
dc.title10-GHz SiGeBiCMOS sub-harmonic Gilbert mixer using the fully symmetrical and time-delay compensated LO cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1093/ietfec/e90-a.2.326en_US
dc.identifier.journalIEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCESen_US
dc.citation.volumeE90Aen_US
dc.citation.issue2en_US
dc.citation.spage326en_US
dc.citation.epage332en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000244547000004-
dc.citation.woscount2-
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