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dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorLai, Yi-Fanen_US
dc.contributor.authorNi, Wei-Xinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorFang, Chih-Yaoen_US
dc.contributor.authorHuang, Jung Y.en_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:14:52Z-
dc.date.available2014-12-08T15:14:52Z-
dc.date.issued2007-01-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2450653en_US
dc.identifier.urihttp://hdl.handle.net/11536/11216-
dc.description.abstractThe authors report a two-terminal metal-oxide-semiconductor photodetector for which light is absorbed in a capping layer of silicon nanocrystals embedded in a mesoporous silica matrix on p-type silicon substrates. Operated at reverse bias, enhanced photoresponse from 300 to 700 nm was observed. The highest optoelectronic conversion efficiency is as high as 200%. The enhancements were explained by a transistorlike mechanism, in which the inversion layer acts as the emitter and trapped positive charges in the mesoporous dielectric layer assist carrier injection from the inversion layer to the contact, such that the primary photocurrent could be amplified. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEnhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2450653en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000243977300005-
dc.citation.woscount37-
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