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dc.contributor.authorHuang, G. S.en_US
dc.contributor.authorYao, H. H.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:14:54Z-
dc.date.available2014-12-08T15:14:54Z-
dc.date.issued2007-01-15en_US
dc.identifier.issn0921-5107en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mseb.2006.08.064en_US
dc.identifier.urihttp://hdl.handle.net/11536/11229-
dc.description.abstractEffects of growth conditions on Al composition and quality of AlxGa1-xN epilayer grown by low-pressure matelorganic vapor phase epitaxy (MOVPE) have been investigated. The dependences of Al composition, growth rate and quality on the NH3 flow rate, TMAl flow rate and growth temperature were studied. The Al composition and quality of AlxGa1-xN film depend not only on the TMAl flow rate, but also on the NH3 flow rate and on the growth temperature. The Al composition of AlxGa1-xN film becomes saturated when the gas-phase composition TMAl/(TMAl + TMGa) increases to 0.4, while quality of AlxGa1-xN film becomes much worse. The Al composition of AlxGa1-xN film increases with increase in the NH3 flow rate. The quality of AlxGa1-xN epilayer is improved when the growth temperature increases. Possible Al incorporation mechanism is discussed. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMOVPEen_US
dc.subjectAlGaNen_US
dc.subjectAl compositionen_US
dc.titleEffect of growth conditions on the Al composition and quality of AlGaN filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mseb.2006.08.064en_US
dc.identifier.journalMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGYen_US
dc.citation.volume136en_US
dc.citation.issue1en_US
dc.citation.spage29en_US
dc.citation.epage32en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000243834200006-
dc.citation.woscount6-
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