InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm

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DC Field	Value	Language
dc.contributor.author	Huang, J. Y.	en_US
dc.contributor.author	Liang, H. C.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Lai, H. C.	en_US
dc.contributor.author	Chen, Y. -F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:14:56Z	-
dc.date.available	2014-12-08T15:14:56Z	-
dc.date.issued	2007-01-10	en_US
dc.identifier.issn	0003-6935	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/AO.46.000239	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11233	-
dc.description.abstract	A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. (c) 2007 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/AO.46.000239	en_US
dc.identifier.journal	APPLIED OPTICS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	2	en_US
dc.citation.spage	239	en_US
dc.citation.epage	242	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000243283500015	-
dc.citation.woscount	13	-
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