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dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorTseng, S. C.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorSu, J. Y.en_US
dc.contributor.authorHuang, G. W.en_US
dc.date.accessioned2014-12-08T15:14:59Z-
dc.date.available2014-12-08T15:14:59Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.22067en_US
dc.identifier.urihttp://hdl.handle.net/11536/11271-
dc.description.abstractThe fully integrated GaInP/GaAs heterojunction bipolar transistor, transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The QVCO at 4.1 GHz has phase noise of - 120 dBc/Hz at 1 MHz offset frequency, output power of 2 dBm and the figure of merit -178 dBc/Hz. (c) 2006 Wiley Periodicals, Inc.en_US
dc.language.isoen_USen_US
dc.subjectGaInP/GaAs heterojunction bipolar transistor (HBT)en_US
dc.subjecttop-series couplingen_US
dc.subjectquadrature voltage controlled oscillator (QVCO)en_US
dc.subjecttransformeren_US
dc.subjectphase noiseen_US
dc.titleLow-phase-noise transformer-based top-series QVCO using GaInP/GaAs HBT technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.22067en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume49en_US
dc.citation.issue1en_US
dc.citation.spage215en_US
dc.citation.epage218en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000242663100066-
dc.citation.woscount0-
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