完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, W. H.en_US
dc.contributor.authorHong, T. H.en_US
dc.contributor.authorKuo, C. T.en_US
dc.date.accessioned2014-12-08T15:15:00Z-
dc.date.available2014-12-08T15:15:00Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn0008-6223en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.carbon.2006.07.020en_US
dc.identifier.urihttp://hdl.handle.net/11536/11277-
dc.description.abstractThe self-assembly of catalytic nanoparticles by the decomposition of an as-deposited oxidized CoCrPt thin film is investigated, and the feasibility of its use in fabricating vertically aligned SWCNT films at a low synthesis temperature (similar to 600 degrees C) by microwave plasma CVD is described. The XPS results indicate that small nanoparticles with the diameters of 3-3.5 nm were formed in the explosion associated with the reduction of PtO(2) in the CoCrPtO(x) film. Cr(2)O(3) is employed to inhibit the agglomeration of nanoparticles and Co is typically involved in the dissolution and precipitation of carbon species for SWCNT growth. These small, self-assembled catalytic nanoparticles obtained from the CoCrPtO(x) ultra-thin film can be used to fabricate an extremely dense and highly oriented SWCNT film oil a silicon wafer at a temperature of similar to 600 degrees C. (c) 2006 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleSuper growth of vertically aligned SWCNTs using self-assembled nanoparticles from CoCrPtO(x) ultra-thin filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.carbon.2006.07.020en_US
dc.identifier.journalCARBONen_US
dc.citation.volume45en_US
dc.citation.issue1en_US
dc.citation.spage97en_US
dc.citation.epage102en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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