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dc.contributor.authorWang, CKen_US
dc.contributor.authorLiu, LMen_US
dc.contributor.authorLiao, Men_US
dc.contributor.authorCheng, HCen_US
dc.contributor.authorLin, MSen_US
dc.date.accessioned2014-12-08T15:02:27Z-
dc.date.available2014-12-08T15:02:27Z-
dc.date.issued1996-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/1127-
dc.description.abstractEnhanced metalorganic chemical vapor deposition (MOCVD) titanium nitride (TiN:C) film with low resistivity (< 700 mu Omega . cm) has been fabricated by thermal decomposition of tetrakis-dimethylamino-titanium (TDMAT; Ti[N(CH3)(2)](4)) Enhancement is carried out by in-situ N-2 plasma treatment of as-deposited TiN:C film and the enhanced TiN:C film has good stability: less than 4% increase in film resistivity after exposure to air for 24 days. The amount of oxygen absorbed in this enhanced TiN:C film after air exposure, determined by Auger electron spectroscopy (AES) was significantly reduced. This enhanced MOCVD TiN:C film has been successfully applied to sub-half-micron devices. A void-tree tungsten plug (W plug) for sub-half-micron holes can be achieved. Good barrier performance and low contact/via resistance have also been demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectMOCVDen_US
dc.subjectTiN:Cen_US
dc.subjectTDMATen_US
dc.subjectN-2 plasmaen_US
dc.subjectW plugen_US
dc.titleEnhanced metalorganic chemical vapor deposition titanium nitride film fabricated using tetrakis-dimethylamino-titanium for barrier metal application in sub-half-micron technologyen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume35en_US
dc.citation.issue8en_US
dc.citation.spage4274en_US
dc.citation.epage4279en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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