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dc.contributor.authorChen, P. -Y.en_US
dc.contributor.authorHsu, K. -H.en_US
dc.contributor.authorCheng, K. -W.en_US
dc.contributor.authorHung, C. -Ten_US
dc.contributor.authorWu, J. -S.en_US
dc.contributor.authorCheng, T. -C.en_US
dc.contributor.authorYu, J. -P.en_US
dc.date.accessioned2014-12-08T15:15:02Z-
dc.date.available2014-12-08T15:15:02Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.2406064en_US
dc.identifier.urihttp://hdl.handle.net/11536/11306-
dc.description.abstractA gated single carbon nanotube field emitter with magnetic focusing is proposed and simulated using a parallelized Poisson's equation solver, coupled with the ray tracing of electrons, on an unstructured tetrahedral adaptive mesh. The magnetic focusing for the electrons can be achieved by a vertically downward magnetic focusing field (-B-z) through the use of either external solenoids or permanent magnets around the field-emission array. The simulation results, assuming uniform magnetic field inside a field-emission unit, are compared with those conventional tetrode-type field emitters using an electrostatic focusing structure. The results reveal that the magnetic focusing design can promise much higher emission current, while a much smaller spot size results at the anode. In addition, the magnitude of the applied gate voltage in the range of 60-120 V shows little influence on the electron-beam diameter at the anode. The proposed magnetic focusing method can also possibly reduce the complexity of the fabrication without the electrostatic focusing structure. Noticeably, a distribution, similar to the Airy function, is obtained that shows the dependence of the spot size at the anode on the magnetic flux intensity. Thus, under suitable magnetic focusing conditions, it is possible to produce well-defined microelectron sources for many field-emission applications, such as novel parallel electron-beam lithography or field-emission displays. (c) 2007 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleModeling of the integrated magnetic focusing and gated field-emission device with single carbon nanotubeen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.2406064en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume25en_US
dc.citation.issue1en_US
dc.citation.spage74en_US
dc.citation.epage81en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000244512400015-
dc.citation.woscount5-
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