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dc.contributor.authorChen, Te-Mingen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorHung, Jui-Yien_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorWu, Shich-Chuanen_US
dc.contributor.authorChen, Chia-Fuen_US
dc.date.accessioned2014-12-08T15:15:03Z-
dc.date.available2014-12-08T15:15:03Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11325-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2436629en_US
dc.description.abstractWe have used nanoporous anodic aluminum oxide (AAO) as a template to fabricate amorphous carbon (alpha-C) coated silicon nanotips by microwave plasma chemical vapor deposition (MPCVD). During the preparation of the well-ordered AAO pore channel array, an underlying TiN layer was anodically oxidized as well in the late stage of the AAO anodization, forming titanium oxide nanomasks for Si nanotip fabrication. The titanium oxide nanomasks were then used to transfer the arrangement pattern of the AAO pore channel array to the Si substrate by plasma etch in the MPCVD system and, therefore, a well-ordered Si nanotip array was produced. An alpha-C layer similar to 5 nm thick was in situ deposited on the Si nanotips during the MPCVD process. The alpha-C layer was rich in nanocrystalline graphitic carbons according to Raman and Auger electron spectroscopies. The nanocrystalline graphitic carbons in the coating and the sharp tip shape made the Si nanotip a good field emitter and a field enhancement factor of similar to 659 was obtained. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleAmorphous carbon coated silicon nanotips fabricated by MPCVD using anodic aluminum oxide as the templateen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2436629en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue4en_US
dc.citation.spageD215en_US
dc.citation.epageD219en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000244792200039-
dc.citation.woscount18-
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