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dc.contributor.authorYeh, C. M.en_US
dc.contributor.authorChen, M. Y.en_US
dc.contributor.authorGan, J.-Y.en_US
dc.contributor.authorHwang, J.en_US
dc.contributor.authorLin, C. D.en_US
dc.contributor.authorChao, T. Y.en_US
dc.contributor.authorCheng, Y. T.en_US
dc.date.accessioned2014-12-08T15:15:06Z-
dc.date.available2014-12-08T15:15:06Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11342-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2735914en_US
dc.description.abstractTemperature and CH4/H-2 ratio of gas-flow rates are the two factors that strongly affect the qualities of vertically aligned single-walled carbon nanotubes (SWCNTs) in gravity-assisted chemical vapor deposition (CVD). The qualities of SWCNTs and other carbon products grown by gravity-assisted CVD were characterized by scanning electron microscopy and Raman spectroscopy. At temperatures between 850 and 900 degrees C, SWCNTs of very good quality stand alone on the substrate. At other temperatures, nanofibers or irregular islands of carbon are present on the substrate. The CH4/H-2 ratio influences the quality of SWCNTs more abruptly than temperature. At low ratio, no carbon nanotube is formed. The window of CH4/H-2 ratio for the growth of vertically aligned SWCNTs ranges from 160:80 to 160:40. At a ratio higher than 160:40, multiwalled CNTs replace SWCNTs and become the dominant product. (C) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleGravity-assisted chemical vapor deposition of vertically aligned single-walled carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2735914en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue7en_US
dc.citation.spageK15en_US
dc.citation.epageK17en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000246892000080-
dc.citation.woscount1-
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