Properties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N4 buffer layers

Abstract

The physical and electrical properties of Pt/SrBi2Ta2O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si2N4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications. (c) 2007 The Electrochemical Society.