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dc.contributor.authorLeu, Ching-Chichen_US
dc.contributor.authorLeu, Chia-Fengen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorYang, Ming-Juien_US
dc.contributor.authorHuang, Rui-Haoen_US
dc.contributor.authorLin, Chen-Hanen_US
dc.contributor.authorHsu, Fan-Yien_US
dc.date.accessioned2014-12-08T15:15:07Z-
dc.date.available2014-12-08T15:15:07Z-
dc.date.issued2007en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/11350-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2710176en_US
dc.description.abstractThe physical and electrical properties of Pt/SrBi2Ta2O9 (SBT)/buffer layer (BL)/Si metal/ferroelectric/insulator/semiconductor (MFIS) structures incorporating HfO2, SiO2, and Si2N4 as buffer layers were investigated. When employing HfO2 as the buffer layer, an MFIS structure exhibiting a high memory ratio was constructed, presumably because of the SBT characteristics and the high quality of the HfO2 layer on the Si substrate. This study demonstrates that HfO2 is one of the best buffer-layer materials for ferroelectric memory applications. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleProperties of Pt/SrBi2Ta2O9/BL/Si MFIS structures containing HfO2, SiO2, and Si3N4 buffer layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2710176en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue5en_US
dc.citation.spageG25en_US
dc.citation.epageG28en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000244895500018-
dc.citation.woscount4-
顯示於類別：期刊論文


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