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dc.contributor.authorHuang, Hung-Wenen_US
dc.contributor.authorLai, C. F.en_US
dc.contributor.authorWang, W. C.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorTsai, R. J.en_US
dc.contributor.authorYu, C. C.en_US
dc.date.accessioned2014-12-08T15:15:07Z-
dc.date.available2014-12-08T15:15:07Z-
dc.date.issued2007en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/11353-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2402489en_US
dc.description.abstractThis study reports the development of GaN-based power-chip light-emitting diodes (LEDs) with sidewall roughness using natural lithography with polystyrene spheres as the etching mask. At an injection current of 350 mA, the LED with sidewall roughness increased the light output intensity of the InGaN/GaN multiple quantum well LEDs by a factor of 1.26, indicating that the LED with sidewall roughness had larger light extraction efficiency. The wall-plug efficiency of GaN-based LED was increased by 26.5% with sidewall roughness. After 1000 h life test, it was found that normalized output power of power-chip LED with sidewall roughness did not show any significant degradation. (c) 2006 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEfficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2402489en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue2en_US
dc.citation.spageH59en_US
dc.citation.epageH62en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000243640400021-
dc.citation.woscount17-
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