A new technique to extract oxide trap time constants in MOSFET's

Abstract

A new technique to determine oxide trap time Constants in a 0.6 mu m n-MOSFET subject to hot electron stress has been proposed, In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived, Our result shows that under a field-emission dominant oxide charge detrapping condition, V-gs = -4 V and V-ds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.