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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorLiou, Sz-Chianen_US
dc.contributor.authorChou, Chen-Chiaen_US
dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorJuan, Chun-Pingen_US
dc.contributor.authorTseng, Huai-Yuanen_US
dc.contributor.authorJan, Chueh-Kueien_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:15:10Z-
dc.date.available2014-12-08T15:15:10Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11400-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2728148en_US
dc.description.abstractPulsed-laser deposited (Pb,Sr)TiO3 (PSrT) films on Pt/SiO2/Si substrate deposited at various oxygen partial pressures (P-O2), ranging from 50 to 200 mTorr, were investigated in this work. PSrT films exhibit (100) preferred orientation at lower P-O2 and then transit to (110) preferred orientation above 100 mTorr. The paraelectricity/ferroelectricity transition and dielectric constant of PSrT films are associated with the preferred orientation and oxygen concentration at various P-O2. Furthermore, films deposited at higher P-O2 exhibit higher breakdown field and smaller leakage current density as a consequence of fewer oxygen vacancies. Except for the case of films deposited at 200 mTorr, the conduction mechanism is identified as Schottky emission/Poole-Frenkel emission at low/high electric fields. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleStructural and electrical investigations of pulse-laser-deposited (Pb,Sr)TiO3 films at various oxygen partial pressuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2728148en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue6en_US
dc.citation.spageG141en_US
dc.citation.epageG146en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000246179800057-
dc.citation.woscount1-
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