統計資料
總造訪次數
| 檢視 | |
|---|---|
| Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy | 114 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| Impacts of ammonia background flows on structural and photoluminescence properties of InN dots grown on GaN by flow-rate modulation epitaxy | 0 | 0 | 0 | 0 | 0 | 1 | 1 |
檔案下載
| 檢視 | |
|---|---|
| 000243157600098.pdf | 8 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 97 |
| 美國 | 13 |
| 台灣 | 2 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Kensington | 6 |
| Menlo Park | 6 |
| Taipei | 2 |
| Beijing | 1 |
| Durham | 1 |