標題: Highly power efficient organic light-emitting diodes with a p-doping layer
作者: Chang, Chan-Ching
Hsieh, Ming-Ta
Chen, Jenn-Fang
Hwang, Shiao-Wen
Chen, Chin H.
電子物理學系
電子與資訊研究中心
Department of Electrophysics
Microelectronics and Information Systems Research Center
公開日期: 18-十二月-2006
摘要: In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4('),4(')-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2-TNATA) to replace the volatile tetrafluro-tetracyanoquinodimethane. The authors propose the 2-TNATA:WO3 composition functions as a p-doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8-quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m(2). (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2405856
http://hdl.handle.net/11536/11428
ISSN: 0003-6951
DOI: 10.1063/1.2405856
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 25
結束頁: 
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