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dc.contributor.authorChou, Yi-Hsuanen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.contributor.authorKuo, Teng-Fangen_US
dc.contributor.authorChi, Cheng-Chungen_US
dc.contributor.authorChuang, Shiow-Hueyen_US
dc.date.accessioned2014-12-08T15:15:12Z-
dc.date.available2014-12-08T15:15:12Z-
dc.date.issued2006-12-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2405848en_US
dc.identifier.urihttp://hdl.handle.net/11536/11429-
dc.description.abstractHafnium nitride films were prepared on the Si(100) substrates by the metal-organic chemical vapor deposition method using Hf[N(C2H5)(2)](4). The prepared samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the associated physical properties were investigated. The x-ray photoelectron spectroscope analysis unveiled that the composition of the films is HfOxNy. In addition, the films after the rapid-thermal annealing treatments at various temperatures revealed salient features in their physical properties, such as capacitance and conductivity. On this basis, the feasibility of using the HfOxNy layers as high-k dielectrics in complementary metal oxide semiconductor transistors was also discussed. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleIntriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)(2)](4)en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2405848en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue25en_US
dc.citation.epageen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000243415200073-
dc.citation.woscount10-
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