Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tseng, Sheng-Che | en_US |
dc.contributor.author | Meng, Chinchun | en_US |
dc.contributor.author | Chang, Chia-Hung | en_US |
dc.contributor.author | Wu, Chih-Kai | en_US |
dc.contributor.author | Huang, Guo-Wei | en_US |
dc.date.accessioned | 2014-12-08T15:15:15Z | - |
dc.date.available | 2014-12-08T15:15:15Z | - |
dc.date.issued | 2006-12-01 | en_US |
dc.identifier.issn | 0018-9480 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TMTT.2006.884690 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11459 | - |
dc.description.abstract | A single-ended wideband downconversion Gilbert micromixer is demonstrated in this paper using 0.35-mu m SiGe BiCMOS technology. A transimpedance amplifier with resistive feedback is utilized in the IF stage while a broadband Marchand balun is employed to generate wideband differential local oscillator signals. The planar Marchand balun topology employed in this paper can generate truly balanced signals even in the presence of the lossy low-resistivity (similar to 10 Omega (.) cm) silicon substrate. A systematic approach to measure the frequency response of each individual stage in a Gilbert mixer is developed in this paper. This single-ended wideband mixer has the conversion gain of 15 dB, IP1dB of -19 dBm, IIP3 of -7 dBm, and the noise figure of 13 dB. The mixer works from 3.5 to 14.5 GHz. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | downconverter | en_US |
dc.subject | Marchand balun | en_US |
dc.subject | micromixer | en_US |
dc.subject | SiGeBiCMOS | en_US |
dc.subject | silicon substrate | en_US |
dc.subject | transimpedance amplifier (TIA) | en_US |
dc.subject | wideband | en_US |
dc.title | Monolithic broadband Gilbert micromixer with an integrated Marchand balun using standard silicon IC process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TMTT.2006.884690 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | en_US |
dc.citation.volume | 54 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 4362 | en_US |
dc.citation.epage | 4371 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000242949000011 | - |
dc.citation.woscount | 31 | - |
Appears in Collections: | Articles |
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