標題: | Electrical properties in arsenic-ion-implanted GaAs |
作者: | Chen, WC Chang, CS 交大名義發表 光電工程學系 National Chiao Tung University Department of Photonics |
公開日期: | 1-八月-1996 |
摘要: | A model of effective surface potential energy is proposed to explain unknown behavior of carrier transport in film and leakage currents in Schottky diodes. X-ray photoelectron spectroscopy is employed to investigate a series of band diagrams of arsenic-ion-implanted GaAs films. It is shown that the effective surface potential energies, affected by the shift of core levels, are due to different microstructures and atomic environments in these films at different annealing temperatures. Moreover, the effective barrier heights on the surfaces of these films are changed by the different effective surface potential energies which increase from 0.49 to 0.75 eV in films annealed from 200 to 600 degrees C, but slightly decrease to 0.7 eV in films annealed up to 800 degrees C. (C) 1996 American Institute of Physics. |
URI: | http://hdl.handle.net/11536/1148 |
ISSN: | 0021-8979 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 80 |
Issue: | 3 |
起始頁: | 1600 |
結束頁: | 1604 |
顯示於類別: | 期刊論文 |