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dc.contributor.authorChen, S. F.en_US
dc.contributor.authorChang, W. J.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorLiu, S. J.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorGou, Y. S.en_US
dc.date.accessioned2014-12-08T15:15:19Z-
dc.date.available2014-12-08T15:15:19Z-
dc.date.issued2006-12-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2390545en_US
dc.identifier.urihttp://hdl.handle.net/11536/11493-
dc.description.abstractThe angular dependence of magnetoresistance (MR) of the La0.7Ca0.3MnO3 thin film biepitaxial step junction (BSJ) shows a simple sin(2)(theta) dependence in the in-plane high-field magnetoresistance, with theta being the angle between the applied field and current. This behavior is similar to the spin-orbit coupling-induced anisotropic magnetoresistance (AMR) commonly observed in transition ferromagnetic metals, except for two salient features. First, the maximum MR in the present case occurs at an oblique angle between the applied field (H) and electric current (I), while it is usually observed to occur when H parallel to I. Second, the AMR in the plane perpendicular to the film surface displays a remarkable value (Delta rho/rho similar to 8%), which is about an order of magnitude larger than that of the in-plane AMR. Such a large AMR cannot be solely explained by spin-orbit coupling effect. We suggest instead that the metallic and ferromagnetic inhomogeneous granules existing in the BSJ region might have acted as the source of spin-polarized scattering giving rise to the enhanced AMR when the colossal magnetoresistance was measured across the biepitaxial step boundaries. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic magnetoresistance of La0.7Ca0.3MnO3 thin film biepitaxial step junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2390545en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume100en_US
dc.citation.issue11en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000242887400105-
dc.citation.woscount1-
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