Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Chun-Wei | en_US |
dc.contributor.author | Hseh, Tung-Ling | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2014-12-08T15:15:20Z | - |
dc.date.available | 2014-12-08T15:15:20Z | - |
dc.date.issued | 2006-12-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.9029 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11505 | - |
dc.description.abstract | The feasibility of using novel Cu/Mo/Ge/Pd ohmic contacts on n+-GaAs for heterojunction bipolar transistors (HBTs) is investigated. The electrical and material characteristics of the Cu/Mo/Ge/Pd/n(+)-GaAs structure were studied. After thermal annealing at 350 degrees C, the specific contact resistances of the copper ohmic contacts Cu/Mo/Ge/Pd were measured to be 2.8 x 10(-7) Omega cm(2). Judging from the data of sheet resistance, X-ray diffraction analysis, Auger electron spectroscopy, and transmission electron microscopy, the Cu/Mo/Ge/Pd contact structure was very stable after annealing at 350 degrees C. However, after 400 degrees C annealing, the reaction of copper with the underneath layers started to occur and formed MoGe2, Cu3Ga and Ge3CU phases. An InGaP/GaAs HBT with C'u/Mo/Ge/Pd contact metals was fabricated and compared with an HBT fabricated with traditional Au/Ni/Ge/Au contact metals. These two kinds of HBTs showed similar device characteristics. After reaching thermal stability and per-forming a high current-accelerated stress test at a current density of 120 kA/cm(2) for 24h, the device with the Cu/Mo/Ge/Pd ohmic contacts still exhibits excellent electrical characteristics. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | copper metallization | en_US |
dc.subject | GaAs | en_US |
dc.subject | heterojunction bipolar transistor | en_US |
dc.subject | ohmic contact | en_US |
dc.subject | Pd/Ge | en_US |
dc.title | New Cu/Mo/Ge/Pd ohmic contacts on highly doped n-GaAs for InGaP/GaAs heterojunction bipolar transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.45.9029 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 9029 | en_US |
dc.citation.epage | 9032 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000243987900005 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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