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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorLai, Yi-Shengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorTseng, Huai-Yuanen_US
dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorJan, Chueh-Kueien_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:15:22Z-
dc.date.available2014-12-08T15:15:22Z-
dc.date.issued2006-11-22en_US
dc.identifier.issn0953-8984en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0953-8984/18/46/013en_US
dc.identifier.urihttp://hdl.handle.net/11536/11531-
dc.description.abstractPulsed- laser deposited ( Pb, Sr) TiO3 ( PSrT) films on Pt/ SiO2/ Si substrate at various ambient oxygen pressures ( P-O2) are investigated in this work. Films deposited at P-O2 below 100 mTorr exhibit the ( 100) preferred orientation and a tetragonal structure with larger tetragonality. In addition, films deposited at 80 mTorr exhibit the most apparent ferroelectric properties in contrast to those deposited at 200 mTorr. Moreover, films deposited at higher P-O2 also exhibit longer lifetimes and higher breakdown fields due to their smaller leakage current density, in terms of the reduction of defects, compensation of oxygen vacancies (OVs), an improved interface and small cluster sizes. An energy band model reveals that fatigue properties of PSrT films are dominated by interfacial states at low P-O2 and by deep trapping states at high P-O2, which could be ascribed to OVs located at the interfaces and inside films, respectively.en_US
dc.language.isoen_USen_US
dc.titleStudy on fatigue and breakdown properties of Pt/(Pb,Sr)TiO3/Pt capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0953-8984/18/46/013en_US
dc.identifier.journalJOURNAL OF PHYSICS-CONDENSED MATTERen_US
dc.citation.volume18en_US
dc.citation.issue46en_US
dc.citation.spage10457en_US
dc.citation.epage10467en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000242599500014-
dc.citation.woscount11-
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