Optical characteristics and microstructure of ZnO quantum dots-SiO2 nanocomposite films prepared by sputtering methods

doi:10.1063/1.2387111

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Peng, Yu-Yun	en_US
dc.contributor.author	Hsieh, Tsung-Eong	en_US
dc.contributor.author	Hsu, Chia-Hung	en_US
dc.date.accessioned	2014-12-08T15:15:22Z	-
dc.date.available	2014-12-08T15:15:22Z	-
dc.date.issued	2006-11-20	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2387111	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11533	-
dc.description.abstract	ZnO quantum dots (QDs)-SiO2 nanocomposite films were prepared using the target-attached radio-frequency sputtering. The transmission electron microscopy revealed the uniform dispersion of ZnO QDs with diameters about 2-7 nm in amorphous SiO2 matrix. The photoluminescence showed that small ZnO QDs are able to emit white light with luminescence spectra similar to those of the present GaN-based light emitting diode (LED). The calculated chromaticity coordinates of emitting light evidenced the feasibility of ZnO QDs-SiO2 nanocomposite films as the fluorescence material in optoelectronic devices. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Optical characteristics and microstructure of ZnO quantum dots-SiO2 nanocomposite films prepared by sputtering methods	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2387111	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	21	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000242220000036	-
dc.citation.woscount	30	-
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