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dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorHsieh, C. C.en_US
dc.contributor.authorChen, Y. -J.en_US
dc.contributor.authorShih, P. T.en_US
dc.contributor.authorChen, M. H.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorGou, Y. S.en_US
dc.date.accessioned2019-04-03T06:45:04Z-
dc.date.available2019-04-03T06:45:04Z-
dc.date.issued2006-11-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.74.184525en_US
dc.identifier.urihttp://hdl.handle.net/11536/11566-
dc.description.abstractBy the spatial-temporal-resolved femtosecond spectroscopy on well-textured (110)- and (100)-YBCO thin films, two distinctly temperature-dependent characteristics of quasiparticle relaxation in the nodal and antinodal directions are clearly identified. One temperature dependence associated with a high-energy gap has been observed along the ab diagonal for the whole hole-doping region and along the b axis except near optimal doping, while the other temperature dependence related to the opening of the superconducting gap appears along b axis regardless of the hole concentration. This spatial dichotomy between the nodal and antinodal quasiparticle dynamics and the evolution of gap symmetry with hole doping are discussed for enlightenment on the nature of the phase diagram of hole-doped cuprates. These strongly suggest that the two characteristics may have different physical origins and compete with each other.en_US
dc.language.isoen_USen_US
dc.titleSpatial dichotomy of quasiparticle dynamics in underdoped thin-film YBa2Cu3O7-delta superconductorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.74.184525en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume74en_US
dc.citation.issue18en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000242409100106en_US
dc.citation.woscount10en_US
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