標題: The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO(3)
作者: Wang, Wei-Lin
Ho, Yen-Teng
Liang, Mei-Hui
Peng, Chun-Yen
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-四月-2010
摘要: Both non-polar a-plane GaN and ZnO films grown on (0 0 1) LaAlO(3) (LAO) substrates consist of orthogonal domain structures. The influence of inserted underlying ZnO on the growth behavior of subsequently grown GaN has been investigated by using transmission electron microscopy and scanning electron microscopy. The size of GaN domains is increased after the incorporation of ZnO underlayer. GaN domains deposited on ZnO/(0 0 1) LAO extend along an in-plane preferential direction which has about 43-45 degrees from [0 0 0 1](GaN). The underlying ZnO results in overgrown GaN domains to locally form r-plane twin structures. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.12.040
http://hdl.handle.net/11536/11567
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.12.040
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 312
Issue: 8
起始頁: 1175
結束頁: 1178
顯示於類別:會議論文