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dc.contributor.authorWijers, C. M. J.en_US
dc.contributor.authorChu, J. -H.en_US
dc.contributor.authorVoskoboynikov, O.en_US
dc.date.accessioned2014-12-08T15:15:27Z-
dc.date.available2014-12-08T15:15:27Z-
dc.date.issued2006-11-01en_US
dc.identifier.issn1434-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1140/epjb/e2006-00443-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/11571-
dc.description.abstractThe influence of the surrounding semiconducting matrix upon the optical response of embedded nano-objects (quantum dots) has been investigated. This system can be described by means of a hybrid model, where the full response is a combination of a macroscopic electrostatic response term and a dynamic response term, obtained quantum mechanically. The result is a modified discrete dipole model, where excess discrete dipoles having an excess polarizability with respect to a uniform background identical to the dielectric host material represent the response. In this model all electrodynamic interactions are screened by the host material. The electrostatic response is obtained by approximating the quantum dots by embedded dielectric oblate ellipsoids. Closed expressions for the electrostatic response of these ellipsoids have been derived. The electrodynamic nature of the dynamic quantum mechanical polarizability term however is unclear. It is not certain whether this polarizability is dressed or bare. Therefore we have investigated in detail the consequences of both options. Although there is no real qualitative difference between them, the difference is so large that experiment can easily discriminate between both. Results should be easily measurable anyhow.en_US
dc.language.isoen_USen_US
dc.titleOptics of embedded semiconductor nano-objects using a hybrid model: bare versus dressed polarizabilitiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1140/epjb/e2006-00443-yen_US
dc.identifier.journalEUROPEAN PHYSICAL JOURNAL Ben_US
dc.citation.volume54en_US
dc.citation.issue2en_US
dc.citation.spage225en_US
dc.citation.epage241en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243052600012-
dc.citation.woscount4-
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