完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChin, Aen_US
dc.contributor.authorChen, WJen_US
dc.contributor.authorGanikhanov, Fen_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorPan, CLen_US
dc.contributor.authorHsieh, KCen_US
dc.date.accessioned2014-12-08T15:02:29Z-
dc.date.available2014-12-08T15:02:29Z-
dc.date.issued1996-07-15en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/1160-
dc.description.abstractCross-sectional transmission electron microscopy (TEM) and femtosecond (fs) reflectivity are used to study (Ga,As) compound grown at low temperatures from 160 to 70 degrees C, A columnar polycrystalline GaAs is observed for samples grown at 160 degrees C while it appears amorphous for samples grown at temperatures below 120 degrees C, The successful growth of amorphous (Ga,As) at 70 degrees C, instead of a mixture of metallic Ga droplets and As solids, suggests that the decomposition of As-4 molecules may be catalyzed by the surface Ga. Upon annealing, all samples become polycrystalline before epitaxial solid state regrowth eventually dominates and the whole sample becomes single crystal for long enough annealing. Carrier lifetime of 230 fs is measured for the as-grown amorphous sample. For the annealed sample, the photoresponse exhibits a fast initial decay of 120 fs and a much slower secondary decay of 33 ps. The initial decay is attributed to the formation of fine polycrystalline grains (similar to 500 Angstrom in size) whose grain boundaries provide effective carrier traps and recombination centers. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMicrostructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperaturesen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume69en_US
dc.citation.issue3en_US
dc.citation.spage397en_US
dc.citation.epage399en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
顯示於類別:期刊論文