Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Tzung-Han	en_US
dc.contributor.author	Meng, Chinchun	en_US
dc.contributor.author	Huang, Guo-Wei	en_US
dc.date.accessioned	2014-12-08T15:15:31Z	-
dc.date.available	2014-12-08T15:15:31Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0687-6	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11612	-
dc.description.abstract	A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaInP/GaAs HBT	en_US
dc.subject	wideband amplifier	en_US
dc.subject	micromixer	en_US
dc.subject	Gilbert mixer	en_US
dc.title	Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6	en_US
dc.citation.spage	2128	en_US
dc.citation.epage	2131	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000250827405067	-
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