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dc.contributor.authorJao, Jui-Chuen_US
dc.contributor.authorLin, Pangen_US
dc.date.accessioned2014-12-08T15:15:33Z-
dc.date.available2014-12-08T15:15:33Z-
dc.date.issued2006-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.8751en_US
dc.identifier.urihttp://hdl.handle.net/11536/11635-
dc.description.abstractmethod of estimating the dielectric constant (E) of dielectric layers in low-temperature-cofired ceramic (LTCC) devices was developed. A band-pass filter (BPF) circuit was designed such that its second harmonic frequency (SHF) strongly depended on the epsilon of the relevant capacitor built in the BPF. The epsilon-SHF correlation was established by model simulation. The design of the BPF was realized with various dielectric layers, and the measured SHF was used to determine the E values of the capacitors from the epsilon-SHF relationship. These epsilon values were found to be consistent with those of the sintered pellets, prepared with the same dielectrics and process as BPFs. The e values of the dielectric layers in other LTCC devices were estimated by this method, in which the BPFs made of the same dielectric layers were fired as dummy samples along with the devices.en_US
dc.language.isoen_USen_US
dc.subjectdielectric constanten_US
dc.subjectLTCCen_US
dc.subjectsecond harmonic frequencyen_US
dc.subjectnondestructive evaluationen_US
dc.subjectband-pass filteren_US
dc.titleMethod of estimating dielectric properties of dielectric layers in low-temperature-cofired ceramic devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.8751en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue11en_US
dc.citation.spage8751en_US
dc.citation.epage8754en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000242323200046-
dc.citation.woscount0-
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