標題: | Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation |
作者: | Huang, Hung-Wen Kao, C. C. Chu, J. T. Liang, W. D. Kuo, H. C. Wang, S. C. Yu, C. C. 光電工程學系 Department of Photonics |
關鍵字: | gallium nitride (GaN);light emitting diode (LED);excimer laser |
公開日期: | 10-十月-2006 |
摘要: | In this paper, we reported the InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface which caused by KrF excimer laser-irradiation. Comparing with the conventional LED, the brightness of InGaN/GaN light emitting diode (LED) was raised by a factor of 1.25 at 20 mA after KrF excimer laser-irradiation (250 mJ cm(-2) at 248 nm for 25 ns). Meanwhile, the operation voltage of InGaN/GaN LED was reduced from 3.55 to 3.3 V at 20 mA with 29% reduction in the series resistance. The causes for the brightness increase can be attributed to laser-irradiation induced nano-roughening of p-GaN surface. The reduction in the series resistance can be attributed to the increased contact area of nano-roughened surface and higher hole concentration after laser-irradiation. (c) 2005 Published by Elsevier B.V. |
URI: | http://dx.doi.org/10.1016/j.matchemphys.2005.11.013 http://hdl.handle.net/11536/11683 |
ISSN: | 0254-0584 |
DOI: | 10.1016/j.matchemphys.2005.11.013 |
期刊: | MATERIALS CHEMISTRY AND PHYSICS |
Volume: | 99 |
Issue: | 2-3 |
起始頁: | 414 |
結束頁: | 417 |
顯示於類別: | 期刊論文 |