標題: Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation
作者: Huang, Hung-Wen
Kao, C. C.
Chu, J. T.
Liang, W. D.
Kuo, H. C.
Wang, S. C.
Yu, C. C.
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);light emitting diode (LED);excimer laser
公開日期: 10-Oct-2006
摘要: In this paper, we reported the InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface which caused by KrF excimer laser-irradiation. Comparing with the conventional LED, the brightness of InGaN/GaN light emitting diode (LED) was raised by a factor of 1.25 at 20 mA after KrF excimer laser-irradiation (250 mJ cm(-2) at 248 nm for 25 ns). Meanwhile, the operation voltage of InGaN/GaN LED was reduced from 3.55 to 3.3 V at 20 mA with 29% reduction in the series resistance. The causes for the brightness increase can be attributed to laser-irradiation induced nano-roughening of p-GaN surface. The reduction in the series resistance can be attributed to the increased contact area of nano-roughened surface and higher hole concentration after laser-irradiation. (c) 2005 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.matchemphys.2005.11.013
http://hdl.handle.net/11536/11683
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2005.11.013
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 99
Issue: 2-3
起始頁: 414
結束頁: 417
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