完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Hung-Wen | en_US |
dc.contributor.author | Kao, C. C. | en_US |
dc.contributor.author | Chu, J. T. | en_US |
dc.contributor.author | Liang, W. D. | en_US |
dc.contributor.author | Kuo, H. C. | en_US |
dc.contributor.author | Wang, S. C. | en_US |
dc.contributor.author | Yu, C. C. | en_US |
dc.date.accessioned | 2014-12-08T15:15:38Z | - |
dc.date.available | 2014-12-08T15:15:38Z | - |
dc.date.issued | 2006-10-10 | en_US |
dc.identifier.issn | 0254-0584 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.matchemphys.2005.11.013 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11683 | - |
dc.description.abstract | In this paper, we reported the InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface which caused by KrF excimer laser-irradiation. Comparing with the conventional LED, the brightness of InGaN/GaN light emitting diode (LED) was raised by a factor of 1.25 at 20 mA after KrF excimer laser-irradiation (250 mJ cm(-2) at 248 nm for 25 ns). Meanwhile, the operation voltage of InGaN/GaN LED was reduced from 3.55 to 3.3 V at 20 mA with 29% reduction in the series resistance. The causes for the brightness increase can be attributed to laser-irradiation induced nano-roughening of p-GaN surface. The reduction in the series resistance can be attributed to the increased contact area of nano-roughened surface and higher hole concentration after laser-irradiation. (c) 2005 Published by Elsevier B.V. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | gallium nitride (GaN) | en_US |
dc.subject | light emitting diode (LED) | en_US |
dc.subject | excimer laser | en_US |
dc.title | Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.matchemphys.2005.11.013 | en_US |
dc.identifier.journal | MATERIALS CHEMISTRY AND PHYSICS | en_US |
dc.citation.volume | 99 | en_US |
dc.citation.issue | 2-3 | en_US |
dc.citation.spage | 414 | en_US |
dc.citation.epage | 417 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000240775300039 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |