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dc.contributor.authorSu, J. -Y.en_US
dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorLi, Y. -H.en_US
dc.contributor.authorTseng, S. -C.en_US
dc.contributor.authorHuang, G. -W.en_US
dc.date.accessioned2014-12-08T15:15:40Z-
dc.date.available2014-12-08T15:15:40Z-
dc.date.issued2006-10-01en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.21838en_US
dc.identifier.urihttp://hdl.handle.net/11536/11706-
dc.description.abstractTwo major techniques for gain improvement of the CMOS low noise amplifier (LNA) and mixer are presented. First, the inductive interstage matching is applied to design a cascode amplifier for increasing the power transfer between the common source (CS) and common gate (CG) stages. Second, a super source follower (SSF) is utilized in a P-type micromixer for increasing the conversion gain of the mixer. A series of investigations are performed for demonstrating the feasibilities of the proposed techniques. The LNA and mixer designs based on the proposed techniques are realized using 0.35 im IP4M CMOS technology. Then their measured results are compared with those of a preliminary design, which fully integrates a conventional cascode amplifier and a P-type micromixer. The gain of the LNA is increased 2.1 dB and the noise figure is maintained at the same value of the preliminary design. On the other hand, the conversion gain of the super source follower (SSF) of the micromixer output is improved about 9.5 dB. Such improvements reveal great potential of the proposed design techniques on the gain enhancement for the LNA and mixer. Then, the measured results of the preliminary design show the return-loss of 25 dB, the isolation of better than 30 dB, and the conversion gain of 4.8 dB in the 2.4 GHz ISM hand. (C) 2006 Wiley Periodicals, Inc.en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectLNAen_US
dc.subjectcascade amplifieren_US
dc.subjectinterstage matchingen_US
dc.subjectmixeren_US
dc.titleGain enhancement techniques for CMOS LNA and mixeren_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.21838en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume48en_US
dc.citation.issue10en_US
dc.citation.spage2067en_US
dc.citation.epage2070en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000239682100048-
dc.citation.woscount0-
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