Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Y. C.	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Yamaguchi, H.	en_US
dc.contributor.author	Hirayama, Y.	en_US
dc.contributor.author	Chang, X. Y.	en_US
dc.contributor.author	Chang, C. Y.	en_US
dc.date.accessioned	2014-12-08T15:15:41Z	-
dc.date.available	2014-12-08T15:15:41Z	-
dc.date.issued	2006-10-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2006.884081	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11722	-
dc.language.iso	en_US	en_US
dc.title	Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)	en_US
dc.type	Correction	en_US
dc.identifier.doi	10.1109/LED.2006.884081	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	10	en_US
dc.citation.spage	866	en_US
dc.citation.epage	866	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
dc.identifier.wosnumber	WOS:000240925900024	-
dc.citation.woscount	0	-
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