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dc.contributor.authorLim, Cheng Guanen_US
dc.date.accessioned2014-12-08T15:15:43Z-
dc.date.available2014-12-08T15:15:43Z-
dc.date.issued2006-10-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2006.881473en_US
dc.identifier.urihttp://hdl.handle.net/11536/11750-
dc.description.abstractThe signal injection efficiency of electroabsorption modulator integrated lasers (EMLs) is improved to suit 10-Gb/s applications. For a typical EML module design with a conventionally designed 50-Omega signal feeder to meet the input return loss requirement for 10-Gb/s applications, a reduction in device capacitance of the electroabsorption modulator (EAM) section by 65% from its typical value is necessary. By optimizing the characteristic impedance of the signal feeder, the required 65% reduction in device capacitance of the EAM section is reduced to 45%, which would naturally lead to enhanced extinction ratio and optical output power. With the addition of a series 5-Omega thin-film resistor along the signal feeder, the device capacitance reduction of the EAM section is further reduced to approximately 33% of the typical value.en_US
dc.language.isoen_USen_US
dc.subjectelectroabsorption modulator integrated lasers (EMLs)en_US
dc.subjectelectroabsorption modulators (EAM)en_US
dc.subjectimpedance matchingen_US
dc.subjectinput return lossen_US
dc.titleThe effect of signal-feeder characteristic impedance on the signal injection efficiency of electroabsorption modulator integrated lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2006.881473en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume24en_US
dc.citation.issue10en_US
dc.citation.spage3835en_US
dc.citation.epage3841en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000241542700034-
dc.citation.woscount3-
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