High-resolution XANES study of Eu(Ba1-xRx)(2)Cu3O7+delta (R = Eu, Pr)

doi:10.1088/1367-2630/8/9/215

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DC 欄位	值	語言
dc.contributor.author	Chen, J. M.	en_US
dc.contributor.author	Liu, R. S.	en_US
dc.contributor.author	Lee, J. M.	en_US
dc.contributor.author	T Lu, K.	en_US
dc.contributor.author	Yang, T. J.	en_US
dc.contributor.author	Kramer, M. J.	en_US
dc.contributor.author	McCallum, R. W.	en_US
dc.date.accessioned	2014-12-08T15:15:43Z	-
dc.date.available	2014-12-08T15:15:43Z	-
dc.date.issued	2006-09-27	en_US
dc.identifier.issn	1367-2630	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/1367-2630/8/9/215	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11755	-
dc.description.abstract	We have probed the distribution of hole carriers in Eu(Ba1-xEux)(2) Cu3O7+delta (x = 0 - 0.2) and Eu(Ba1-xPrx)(2)Cu3O7+delta (x = 0 - 0.25) by O K-edge and Cu L-edge x-ray absorption spectra. Upon Eu and Pr substitution at the Ba site in Eu(Ba1-xRx)(2)Cu3O7+delta, the concentration of holes in the CuO2 planes becomes greatly diminished. The depletion rate of hole carriers within the CuO2 planes in Eu(Ba1-xPrx)(2)Cu3O7+delta is greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta. The rate of T-c suppression with Pr doping in Eu(Ba1-xPrx)(2)Cu3O7+delta is accordingly greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta.	en_US
dc.language.iso	en_US	en_US
dc.title	High-resolution XANES study of Eu(Ba1-xRx)(2)Cu3O7+delta (R = Eu, Pr)	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/1367-2630/8/9/215	en_US
dc.identifier.journal	NEW JOURNAL OF PHYSICS	en_US
dc.citation.volume	8	en_US
dc.citation.issue		en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000240807500005	-
dc.citation.woscount	2	-
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