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dc.contributor.authorChang, M. N.en_US
dc.contributor.authorChen, C. Y.en_US
dc.contributor.authorYang, M. J.en_US
dc.contributor.authorChien, C. H.en_US
dc.date.accessioned2014-12-08T15:15:45Z-
dc.date.available2014-12-08T15:15:45Z-
dc.date.issued2006-09-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2357873en_US
dc.identifier.urihttp://hdl.handle.net/11536/11759-
dc.description.abstractThe authors have used front-wing conductive probes to investigate the photovoltaic effect on the conductive atomic force microscopic (C-AFM) characterization of thin dielectric films. The surface photovoltage induced by the laser beam of an atomic force microscope can enhance the electrical field across the studied dielectric film, decreasing the onset voltage of the leakage current, resulting in a modified C-AFM image with a larger current distribution. Moreover, the experimental results also revealed that the influence of the photovoltaic effect on C-AFM would be more significant for dielectric films that are grown on a substrate with a higher carrier concentration. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePhotovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2357873en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume89en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240875800109-
dc.citation.woscount2-
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