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dc.contributor.authorChen, J. M.en_US
dc.contributor.authorLu, K. T.en_US
dc.contributor.authorLee, J. M.en_US
dc.contributor.authorHaw, S. C.en_US
dc.date.accessioned2014-12-08T15:15:47Z-
dc.date.available2014-12-08T15:15:47Z-
dc.date.issued2006-09-15en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.susc.2006.01.059en_US
dc.identifier.urihttp://hdl.handle.net/11536/11770-
dc.description.abstractX-ray initiated molecular photochemistry for SiCl(4) and CCl(4) adsorbed on Si(100) at similar to 90 K following C1 2p core-level excitation is investigated by photon stimulated ion desorption and ion kinetic energy distribution measurements. The Cl 2p -> 8a(1)*, excitation of solid SiCl(4) induces the significant enhancement (similar to 900%) of the Cl(+) yield, while the Cl 2p -> 7a(1)* excitation of condensed CCl(4) leads to a moderate enhancement (similar to 500%) of the Cl(+) yield. The enhancement of Cl(+) yield at the specific core-excited states is strongly correlated to the ion escaped energy. Upon X-ray exposure for CCl(4) adsorbed on Si(100) (20-L exposure), the Cl(+) yields at 7a(1)* resonances decrease and new structures at higher photon energies are observed. Cl+ yields at these new resonances are significantly enhanced compared to those at other resonances. These changes are the results of desorption and surface reaction of the CCl(4)-Si surface complex due to X-ray irradiation. We have demonstrated that state-specific enhancement of ion desorption can be successfully applied to characterize the reaction dynamics of adsorbates adsorbed on surfaces by X-ray irradiation. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectphoton stimulated ion desorptionen_US
dc.subjection kinetic energy distributionen_US
dc.subjectstate-specific fragmentationen_US
dc.subjectsynchrotron radiationen_US
dc.titleX-ray initiated molecular photochemistry of Cl-containing adsorbates on a Si(100) surface using synchrotron radiationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.susc.2006.01.059en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume600en_US
dc.citation.issue18en_US
dc.citation.spage3544en_US
dc.citation.epage3549en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000241450600007-
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