Gain flattened erbium-doped amplifier with 34 nm flat bandwidth

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, C. -H.	en_US
dc.contributor.author	Lin, M. -C.	en_US
dc.contributor.author	Chi, S.	en_US
dc.date.accessioned	2014-12-08T15:15:48Z	-
dc.date.available	2014-12-08T15:15:48Z	-
dc.date.issued	2006-09-14	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20062334	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11776	-
dc.description.abstract	A gain-flattened two-stage erbium-based fibre amplifier module, structured by an erbium-doped waveguide amplifier and an erbium-doped fibre amplifier in serial, is proposed and demonstrated experimentally. In an operating range of 1528 to 1562 nm, all the gain is above 35 d13 and the noise figure is distributed from 5.5 to 6.7 dB, and +/- 1.1 dB maximum gain variation is retrieved at an input saturation power of -25 dBm. As a result, the proposed amplifier not only enhances gain value but possesses flatness in the operating region.	en_US
dc.language.iso	en_US	en_US
dc.title	Gain flattened erbium-doped amplifier with 34 nm flat bandwidth	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20062334	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	42	en_US
dc.citation.issue	19	en_US
dc.citation.spage	1086	en_US
dc.citation.epage	1088	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000241610400012	-
dc.citation.woscount	4	-
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