完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ling, Shih-Chun | en_US |
dc.contributor.author | Chao, Chu-Li | en_US |
dc.contributor.author | Chen, Jun-Rong | en_US |
dc.contributor.author | Liu, Po-Chun | en_US |
dc.contributor.author | Ko, Tsung-Shine | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.contributor.author | Cheng, Shun-Jen | en_US |
dc.contributor.author | Tsay, Jenq-Dar | en_US |
dc.date.accessioned | 2014-12-08T15:15:49Z | - |
dc.date.available | 2014-12-08T15:15:49Z | - |
dc.date.issued | 2010-04-01 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2009.10.047 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/11789 | - |
dc.description.abstract | The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nanorod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 mu m thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2 x 10(9) cm(-2) by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth. (C) 2009 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Metalorganic chemical vapor deposition | en_US |
dc.subject | Nitrides | en_US |
dc.subject | Semiconducting gallium compounds | en_US |
dc.subject | Characterization | en_US |
dc.title | Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2009.10.047 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 312 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 1316 | en_US |
dc.citation.epage | 1320 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000277039100055 | - |
顯示於類別: | 會議論文 |