Surface roughness of sputtered ZnO films

doi:10.1088/0031-8949/2006/T126/016

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DC 欄位	值	語言
dc.contributor.author	Lin, Y. S.	en_US
dc.contributor.author	Hsu, K. C.	en_US
dc.contributor.author	Huang, Y. M.	en_US
dc.date.accessioned	2014-12-08T15:15:49Z	-
dc.date.available	2014-12-08T15:15:49Z	-
dc.date.issued	2006-09-01	en_US
dc.identifier.issn	0031-8949	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0031-8949/2006/T126/016	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11800	-
dc.description.abstract	ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x- ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong ( 002) preferential orientation. The influence of the RF power and target-to-substrate distance (D-ts) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D-ts, root-mean-square (RMS) surface roughnesses of < 0.8 nm are achieved.	en_US
dc.language.iso	en_US	en_US
dc.title	Surface roughness of sputtered ZnO films	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1088/0031-8949/2006/T126/016	en_US
dc.identifier.journal	PHYSICA SCRIPTA	en_US
dc.citation.volume	T126	en_US
dc.citation.issue		en_US
dc.citation.spage	68	en_US
dc.citation.epage	71	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000246789700017	-
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