Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, Y. S.en_US
dc.contributor.authorHsu, K. C.en_US
dc.contributor.authorHuang, Y. M.en_US
dc.date.accessioned2014-12-08T15:15:49Z-
dc.date.available2014-12-08T15:15:49Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0031-8949en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0031-8949/2006/T126/016en_US
dc.identifier.urihttp://hdl.handle.net/11536/11800-
dc.description.abstractZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x- ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong ( 002) preferential orientation. The influence of the RF power and target-to-substrate distance (D-ts) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D-ts, root-mean-square (RMS) surface roughnesses of < 0.8 nm are achieved.en_US
dc.language.isoen_USen_US
dc.titleSurface roughness of sputtered ZnO filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1088/0031-8949/2006/T126/016en_US
dc.identifier.journalPHYSICA SCRIPTAen_US
dc.citation.volumeT126en_US
dc.citation.issueen_US
dc.citation.spage68en_US
dc.citation.epage71en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000246789700017-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000246789700017.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.