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| Component-level measurement for transient-induced latch-up in CMOS ICs under system-level ESD considerations | 108 |
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| Component-level measurement for transient-induced latch-up in CMOS ICs under system-level ESD considerations | 108 |
| 檢視 | |
|---|---|
| 000241787400017.pdf | 9 |
| 檢視 | |
|---|---|
| 中國 | 97 |
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| Shenzhen | 96 |
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