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dc.contributor.authorChang, KMen_US
dc.contributor.authorYeh, THen_US
dc.contributor.authorWang, SWen_US
dc.contributor.authorLi, CHen_US
dc.contributor.authorYang, JYen_US
dc.date.accessioned2014-12-08T15:02:31Z-
dc.date.available2014-12-08T15:02:31Z-
dc.date.issued1996-07-01en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0254-0584(96)80042-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/1182-
dc.description.abstractHalogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl-2/HBr/O-2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.en_US
dc.language.isoen_USen_US
dc.subjectchlorine-based plasmasen_US
dc.subjectelectron cyclotron resonanceen_US
dc.subjectpolysilicon etchingen_US
dc.titleDry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/0254-0584(96)80042-3en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume45en_US
dc.citation.issue1en_US
dc.citation.spage22en_US
dc.citation.epage26en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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