Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, KM | en_US |
dc.contributor.author | Yeh, TH | en_US |
dc.contributor.author | Wang, SW | en_US |
dc.contributor.author | Li, CH | en_US |
dc.contributor.author | Yang, JY | en_US |
dc.date.accessioned | 2014-12-08T15:02:31Z | - |
dc.date.available | 2014-12-08T15:02:31Z | - |
dc.date.issued | 1996-07-01 | en_US |
dc.identifier.issn | 0254-0584 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/0254-0584(96)80042-3 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1182 | - |
dc.description.abstract | Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl-2/HBr/O-2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | chlorine-based plasmas | en_US |
dc.subject | electron cyclotron resonance | en_US |
dc.subject | polysilicon etching | en_US |
dc.title | Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/0254-0584(96)80042-3 | en_US |
dc.identifier.journal | MATERIALS CHEMISTRY AND PHYSICS | en_US |
dc.citation.volume | 45 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 22 | en_US |
dc.citation.epage | 26 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
Appears in Collections: | Articles |
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