Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

doi:10.1016/0254-0584(96)80042-3

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, KM	en_US
dc.contributor.author	Yeh, TH	en_US
dc.contributor.author	Wang, SW	en_US
dc.contributor.author	Li, CH	en_US
dc.contributor.author	Yang, JY	en_US
dc.date.accessioned	2014-12-08T15:02:31Z	-
dc.date.available	2014-12-08T15:02:31Z	-
dc.date.issued	1996-07-01	en_US
dc.identifier.issn	0254-0584	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0254-0584(96)80042-3	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1182	-
dc.description.abstract	Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl-2/HBr/O-2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.	en_US
dc.language.iso	en_US	en_US
dc.subject	chlorine-based plasmas	en_US
dc.subject	electron cyclotron resonance	en_US
dc.subject	polysilicon etching	en_US
dc.title	Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0254-0584(96)80042-3	en_US
dc.identifier.journal	MATERIALS CHEMISTRY AND PHYSICS	en_US
dc.citation.volume	45	en_US
dc.citation.issue	1	en_US
dc.citation.spage	22	en_US
dc.citation.epage	26	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
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