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dc.contributor.authorLai, L. S.en_US
dc.contributor.authorZeng, H. K.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorGou, Y. S.en_US
dc.date.accessioned2014-12-08T15:15:51Z-
dc.date.available2014-12-08T15:15:51Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physc.2006.04.089en_US
dc.identifier.urihttp://hdl.handle.net/11536/11830-
dc.description.abstractMicrostrip ring resonators with quality factor (Q) over 10(4) at temperature 5 K, were fabricated using the double-side YBa2CU3O7-delta (YBCO) epitaxial films deposited on LaAO(3) (LAO) substrates. By placing a narrow gap in the ring resonator, we observed that the original fundamental resonating mode (resonance frequency f = 3.61 GHz) splits into a dual-mode with different resonating frequencies (f = 1.80 GHz and f = 5.33 GHz). These two kinds of the resonator allow us to determine the temperature and frequency dependences of the magnetic penetration depth lambda(T,f) and the surface loss. Several salient features of the above findings related to the nature of low-lying excitations for high-T-c superconductivity as a function of oxygen content will be elucidated. In particular, the current models, suggested by Wen and Lee, will be examined in a quantitative manner. It allows us to give a justification of quasiparticle as Fermi-liquid in the superconducting state. In addition, an equivalent inductance circuit model is suggested to account for the occurrence of the dual-mode resonance. (c) 2006 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectmicrowave ring resonatorsen_US
dc.subjectdual-mode resonanceen_US
dc.subjectmagnetic penetration depthen_US
dc.titlePhysical properties of YBa2Cu3O7-delta thin films using microstrip ring resonators techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.physc.2006.04.089en_US
dc.identifier.journalPHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONSen_US
dc.citation.volume443en_US
dc.citation.issue1-2en_US
dc.citation.spage9en_US
dc.citation.epage17en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000239672400003-
dc.citation.woscount0-
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